driver & gain block amplifiers - chip 2 2 - 50 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC634 gaas phemt mmic driver amplifier, 5 - 20 ghz v01.0308 general description features functional diagram the HMC634 is a gaas mmic phemt driver amplifi er die which operates between 5 and 20 ghz. the amplifi er provides up to 22 db of gain, +31 dbm output ip3, and up to +23 dbm of output power at 1 db gain compression, while requiring 180 ma from a +5v supply. the HMC634 is an ideal driver amplifi er for microwave radio applications from 5 to 20 ghz, and may be biased at +5v, 130 ma to provide 2 db lower gain with improved pae. the HMC634 amplifi er i/os are dc blocked and internally matched to 50 ohms facilitating easy integration into multi-chip-modules (mcms). all data is taken with die connected at input and output rf ports via one 1 mil wedge bond with minimal length of 0.31 mm (12 mils). gain: 22 db p1db: +23 dbm output ip3: +31 dbm saturated power: 24 dbm @ 23% pae supply voltage: +5 v @ 180 ma 50 ohm matched input/output die size: 2.07 x 0.97 x 0.10 mm electrical specifi cations, t a = +25 c, vdd1, vdd2, vdd3, vdd4= 5v, idd= 180ma [1] typical applications the HMC634 is ideal for: ? point-to-point radios ? point- to-multi-point radios & vsat ? lo driver for mixers ? military & space parameter min. typ. max. min. typ. max. units frequency range 5 - 16 16 - 20 ghz gain 17 22 17 20 db gain variation over temperature 0.030 0.040 0.025 0.035 db/ c input return loss 12 9 db output return loss 12 11 db output power for 1 db compression (p1db) 21 23 18 21 dbm saturated output power (psat) 24 22 dbm output third order intercept (ip3) 31 30 dbm noise figure 77.5db supply current (idd1 + idd2 + idd3 + idd4) 180 180 ma [1] adjust vgg between -2 to 0v to achieve idd = 180ma ty pical
driver & gain block amplifiers - chip 2 2 - 51 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature HMC634 v01.0308 gaas phemt mmic driver amplifier, 5 - 20 ghz -40 -30 -20 -10 0 10 20 30 2 4 6 8 10 12 14 16 18 20 22 24 s21 s11 s22 response (db) frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 +25 c +85 c -55 c return loss (db) frequency (ghz) 15 18 21 24 27 30 2 4 6 8 10 12 14 16 18 20 22 24 +25 c +85 c -55 c p1db (dbm) frequency (ghz) 15 18 21 24 27 30 2 4 6 8 10 12 14 16 18 20 22 24 +25 c +85 c -55 c psat (dbm) frequency (ghz) -35 -30 -25 -20 -15 -10 -5 0 2 4 6 8 10 12 14 16 18 20 22 24 +25 c +85 c -55 c return loss (db) frequency (ghz) 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 18 20 22 24 +25 c +85 c -55 c gain (db) frequency (ghz)
driver & gain block amplifiers - chip 2 2 - 52 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power compression @ 12.5 ghz output ip3 vs. temperature noise figure vs. temperature gain & power vs. supply voltage @ 12.5 ghz reverse isolation vs. temperature power compression @ 20 ghz HMC634 v01.0308 gaas phemt mmic driver amplifier, 5 - 20 ghz -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 2 4 6 8 10 12 14 16 18 20 22 24 +25 c +85 c -55 c isolation (db) frequency (ghz) 20 21 22 23 24 25 26 4.5 4.6 4.7 4.8 4.9 5 5.1 5.2 5.3 5.4 5.5 gain p1db psat gain (db), p1db (dbm), psat (dbm) vdd (v) 0 3 6 9 12 15 2 4 6 8 10 12 14 16 18 20 22 24 +25 c +85 c -55 c noise figure (db) frequency (ghz) 16 18 20 22 24 26 28 30 32 34 36 3 6 9 1215182124 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) 0 3 6 9 12 15 18 21 24 27 30 -10 -8 -6 -4 -2 0 2 4 6 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 0 3 6 9 12 15 18 21 24 27 30 -10 -8 -6 -4 -2 0 2 4 6 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm)
driver & gain block amplifiers - chip 2 2 - 53 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com absolute maximum ratings drain bias voltage (vdd1, vdd2, vdd3, vdd4) +5.5 vdc gate bias voltage (vgg) -3 to 0 vdc rf input power (rfin)(vdd = +5 vdc) +10 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 11.93 mw/c above 85 c) 1.07 w thermal resistance (channel to die bottom) 83.8 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c vdd (v) idd (ma) 4.5 175 5.0 180 5.5 182 note: amplifi er will operate over full voltage ranges shown above typical supply current vs. vdd gain, power & output ip3 vs. gate voltage @ 12.5 ghz electrostatic sensitive device observe handling precautions HMC634 v01.0308 gaas phemt mmic driver amplifier, 5 - 20 ghz 15 20 25 30 35 90 120 150 180 210 -0.85 -0.83 -0.8 -0.78 -0.75 -0.73 -0.7 gain p1db psat ip3 idd gain (db), p1db (dbm), psat (dbm), ip3 (dbm) idd (ma) vgg (v)
driver & gain block amplifiers - chip 2 2 - 54 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC634 v01.0308 gaas phemt mmic driver amplifier, 5 - 20 ghz
driver & gain block amplifiers - chip 2 2 - 55 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad descriptions pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2, 3, 4, 5 vdd1, vdd2, vdd3, vdd4 power supply voltage for the amplifi er. see assembly diagram for required external components. 6rfout this pad is ac coupled and matched to 50 ohms. 7vgg gate control for amplifi er, please follow mmic ampli- fi er biasing procedure application note. see assembly diagram for required external components. die bottom gnd die bottom must be connected to rf/dc ground. HMC634 v01.0308 gaas phemt mmic driver amplifier, 5 - 20 ghz
driver & gain block amplifiers - chip 2 2 - 56 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram HMC634 v01.0308 gaas phemt mmic driver amplifier, 5 - 20 ghz
driver & gain block amplifiers - chip 2 2 - 57 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic ribbon bond 0.076mm (0.003?) rf ground plane 0.127mm (0.005?) thick alumina thin film substrate figure 1. 0.102mm (0.004?) thick gaas mmic ribbon bond 0.076mm (0.003?) rf ground plane 0.150mm (0.005?) thick moly tab 0.254mm (0.010? thick alumina thin film substrate figure 2. HMC634 v01.0308 gaas phemt mmic driver amplifier, 5 - 20 ghz
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